Single spherical mirror optic for extreme ultraviolet lithography enabled by inverse lithography technology.

نویسندگان

  • Gregg Scranton
  • Samarth Bhargava
  • Vidya Ganapati
  • Eli Yablonovitch
چکیده

Traditionally, aberration correction in extreme ultraviolet (EUV) projection optics requires the use of multiple lossy mirrors, which results in prohibitively high source power requirements. We analyze a single spherical mirror projection optical system where aberration correction is built into the mask itself, through Inverse Lithography Technology (ILT). By having fewer mirrors, this would reduce the power requirements for EUV lithography. We model a single spherical mirror system with orders of magnitude more spherical aberration than would ever be tolerated in a traditional multiple mirror system. By using ILT, (implemented by an adjoint-based gradient descent optimization algorithm), we design photomasks that successfully print test patterns, in spite of these enormous aberrations. This mathematical method was tested with a 6 plane wave illumination source. Nonetheless, it would have poor power throughput from a totally incoherent source.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Lifetime measurements on collector optics from Xe and Sn extreme ultraviolet sources

Next generation lithography to fabricate smaller and faster chips will use extreme ultraviolet EUV light sources with emission at 13.5 nm. A challenging problem in the development of this technology is the lifetime of collector optics. Mirror surfaces are subjected to harsh debris fluxes of plasma in the form of ions, neutrals, and other radiation, which can damage the surface and degrade refle...

متن کامل

Designing projection objectives for 11-nm node of extreme ultraviolet lithography

Extreme ultraviolet (EUV) lithography is a promising candidate for next-generation lithography. To achieve an 11-nm node, a six-mirror EUV projection objective with a numerical aperture (NA) of 0.5 is designed with the grouping design method. In this design, pupil obscuration is introduced to decrease the angular spread on the mirrors, which still makes the six-mirror objective with aspheric su...

متن کامل

Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond.

All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ≈3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithog...

متن کامل

Effect of Xenon Bombardment on Ruthenium-coated Grazing Incidence Collector Mirror Lifetime for Euv Lithography

The effect of energetic Xenon ion bombardment on the extreme ultraviolet (EUV) reflectivity performance of mirrors is of vital importance for the performance of dischargeand laserproduced plasma extreme ultraviolet lithography (EUVL) sources. To study these effects, we measured absolute and relative reflectivities at the National Institute of Standards and Technology and the Interaction of Mate...

متن کامل

Patterning of nano-scale arrays by table-top extreme ultraviolet laser interferometric lithography.

Arrays of nanodots were directly patterned by interferometric lithography using a bright table-top 46.9 nm laser. Multiple exposures with a Lloyd's mirror interferometer allowed to print arrays of 60 nm FWHM features. This laser-based extreme ultraviolet interferometric technique makes possible to print different nanoscale patterns using a compact table-top set up.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Optics express

دوره 22 21  شماره 

صفحات  -

تاریخ انتشار 2014